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Product Detailed Parameters
- Description：DIODE STANDARD 75V 300MA D5D
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：75 V
- Current - Average Rectified (Io)：300mA
- Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：5 ns
- Current - Reverse Leakage @ Vr：500 nA @ 75 V
- Capacitance @ Vr, F：5pF @ 0V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：SQ-MELF, D
- Supplier Device Package：D-5D
- Operating Temperature - Junction：-65°C ~ 175°C
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Overview
The Microchip Technology 1N6642US is a small signal switching diode designed for surface mount applications. It features a peak reverse voltage of 75 V and an average forward current rating of 300 mA. The device supports a maximum surge current of 2.5 A with a fast recovery time of 5 ns. Electrical characteristics include a maximum forward voltage of 1.2 V and a reverse leakage current of 500 nA. It operates within a temperature range from -65°C to +175°C and utilizes the D-5D-2 package.
Feature Summary
- High-speed switching capability with 5 ns recovery time
- Extended thermal stability up to 175°C junction temperature
- Robust surge current handling at 2.5 A
Applications
- Computer logic circuits
- Signal processing systems
- General purpose switching applications
Procurement Notes
Verify the specific suffix designation when ordering, as variants such as JAN or JANTXV indicate different qualification levels. Confirm the packaging format, typically reel for standard versions, against project requirements. Ensure compliance with RoHS status, which is marked non-compliant for this component series. Cross-reference datasheet revisions to confirm electrical parameter consistency before final procurement.
Selection Notes
Select the 1N6642US for designs requiring a 75 V reverse voltage rating in a compact surface mount footprint. The 300 mA forward current capacity suits low-power signal switching tasks. Consider the 5 ns recovery speed for high-frequency digital applications. Evaluate the D-5D-2 package dimensions for PCB layout constraints compared to through-hole alternatives.
Part Context
This component belongs to the 1N66xxUS series of metallurgically bonded silicon switching diodes manufactured by Microchip Technology. The series includes various voltage ratings and is available in multiple qualification grades. These devices are engineered for reliability in demanding environments, maintaining performance across wide temperature ranges typical of industrial and military specifications.
Replacement Considerations
Publicly confirmed substitute part numbers include JAN1N6642US and JANTXV1N6642U. These variants share identical electrical specifications but differ in manufacturing qualification standards. Verify package compatibility and lead configuration before substituting.
