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The Microchip Technology 1N6663/TR is a standard recovery rectifier diode designed for through-hole mounting in the DO-35-2 axial leaded package. It features a maximum repetitive reverse voltage of 600 V and an average forward current rating of 500 mA. The device exhibits a low forward voltage drop of 1 V at rated current and maintains a minimal reverse leakage current of 50 nA. It supports a peak surge current of 5 A and operates reliably within a junction temperature range from -65°C to +175°C.
Verify the specific suffix TR indicates reel packaging when ordering. Confirm RoHS compliance status as indicated by manufacturer documentation, noting potential restrictions. Ensure the DO-35-2 package dimensions match your PCB footprint requirements. Check for any military or aerospace variants if higher reliability standards are required for your specific application environment.
Select this component for applications requiring reliable standard recovery performance in compact axial packages. The 600 V rating provides sufficient margin for many medium-voltage AC-to-DC conversion tasks. Consider the 500 mA current limit when designing load circuits. The wide temperature range makes it suitable for harsh environments where standard commercial parts might fail.
This part belongs to the 1N66xx series of glass-passivated silicon rectifiers manufactured by Microchip Technology. These components are widely used in legacy and modern designs requiring robust, cost-effective rectification solutions. The 1N6663 variant specifically targets higher voltage applications within this family, offering a balance of speed and voltage withstand capability.
Direct replacements include other 1N6663 equivalents from different manufacturers that meet the same electrical specifications. Verify pinout compatibility and package dimensions before substitution. Alternative fast-recovery diodes may be considered if switching speed is critical, though forward voltage characteristics will differ.