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The Microchip Technology 1N6664 is a general-purpose rectifier diode designed for standard power conversion applications. It features a 100V peak repetitive reverse voltage rating and supports a 10A average forward current. The device utilizes a TO-257 (DO-201) axial leaded package, suitable for through-hole mounting. Key electrical characteristics include a maximum non-repetitive peak surge current of 300A at 8.3ms single half-sine wave. Operating temperatures range from -65°C to +175°C junction temperature. The component is classified as a silicon planar epitaxial diode.
Verify the manufacturer source carefully, as multiple entities list this part. Confirm the package type is TO-257/DO-201. Check RoHS compliance status if required by your assembly process. Ensure the supplier provides valid traceability documentation for critical applications.
Select this component when high current capacity and wide operating temperature ranges are required in a through-hole format. Compare against other DO-201 rectifiers if space constraints exist. Consider reverse voltage margins relative to circuit peak inverse voltage requirements.
This diode belongs to the standard rectifier category from Microchip Technology. It serves as a discrete semiconductor solution for power electronics. The TO-257 package offers mechanical stability for industrial environments. It complements smaller signal diodes for higher power stages.
Equivalent parts include 1N540x series for lower current needs or 1N58xx Schottky types for faster switching. Verify pinout compatibility and thermal dissipation capabilities before substitution.