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The 1N6677-1 is a Schottky barrier rectifier manufactured by Microchip Technology. It features a 200 mA forward current rating and a 40 V repetitive reverse voltage capability. The device utilizes silicon technology and is housed in an axial-leaded DO-35 package. Key electrical parameters include a maximum forward voltage of 500 mV and a peak forward surge current of 5 A. The component operates within a temperature range of -65°C to +125°C.
Verify the specific military qualification level required for your application, as JAN, JANTX, JANTXV, and JANS variants exist for this part number. Confirm RoHS compliance status if environmental regulations apply, noting that compliant versions are available on commercial types but may differ from qualified military grades. Ensure the ordering suffix matches the desired packaging and qualification tier.
Select the 1N6677-1 when a hermetically sealed Schottky rectifier is needed for high-reliability applications. This component is suitable for designs requiring low forward voltage drop and fast switching characteristics in an axial leaded package. Consider the specific MIL-PRF-19500/610 qualification level based on the operational environment and regulatory requirements.
This component belongs to the 1N6675-1 through 1N6677-1 series of Schottky barrier rectifiers. The series offers 200 mA and 500 mA ratings in a hard glass DO-35 package. The 1N6677-1 specifically provides the 200 mA option with a 40 V reverse voltage rating, serving as a ruggedized alternative to standard commercial diodes.
Direct substitutes include other 1N6677 variants with different suffixes indicating package or qualification changes. Verify pinout compatibility and thermal characteristics before replacing.