1N6677-1E3

Overview

The Microchip Technology 1N6677-1E3 is a lead-free Schottky barrier rectifier featuring a 40 V repetitive reverse voltage and a 200 mA average forward current rating. It utilizes silicon technology in an axial-leaded DO-35 (DO-204AH) package with a maximum forward voltage of 500 mV. The device supports a 5 A forward surge current and operates within a temperature range of -65°C to +125°C.

Feature Summary

• Hermetically sealed construction for environmental protection
• Metallurgically bonded internal structure
• Double plug diode construction design

Applications

• General purpose rectification in low-voltage circuits
• Power supply input stages
• Signal detection applications

Procurement Notes

Verify the specific suffix against official documentation, as the 'E3' designation indicates lead-free compliance which may differ from standard commercial or military qualification variants. Confirm package type and RoHS status directly with the manufacturer before procurement to ensure alignment with project requirements.

Selection Notes

Select this component when a hermetically sealed, axial-leaded Schottky rectifier is required for low-voltage applications. Ensure the 200 mA current rating and 40 V blocking voltage meet circuit demands. Verify that the DO-35 package fits the board layout constraints.

Part Context

This part belongs to the 1N6675-1 through 1N6677-1 series of Schottky barrier rectifiers manufactured by Microchip Technology. The series offers various voltage ratings in the same physical package, allowing for design flexibility while maintaining consistent mechanical and thermal characteristics across different voltage specifications.

Replacement Considerations

Check for direct equivalents such as the 1N6677UR-1 for surface mount needs or other 1N667x series variants if voltage ratings differ. Verify that any substitute maintains the hermetic seal and axial lead configuration if those are critical constraints.