1N6677UR-1

Overview

The 1N6677UR-1 is a silicon Schottky barrier rectifier manufactured by Microchip Technology. It features a single diode configuration housed in a DO-35 surface-mount package with round-end leads. The device supports a maximum repetitive reverse voltage of 40 V and an average forward current rating of 200 mA. Key electrical parameters include a maximum forward voltage of 700 mV, a peak forward surge current capability of 5 A, and a maximum reverse leakage current of 600 uA. It operates within a temperature range of -65 C to +150 C.

Feature Summary

• Utilizes Schottky barrier technology for low forward voltage drop characteristics.
• Constructed with silicon material for reliable high-temperature performance.
• Features a hermetically sealed axial-leaded DO-35 package designed for surface mount applications.

Applications

• High-frequency rectification in power supply circuits
• Clamping and protection in RF signal paths
• Reverse polarity protection in low-voltage DC systems

Procurement Notes

Verify the specific suffix UR-1 against official Microchip documentation to confirm the round-end lead form factor and surface mount compatibility. Ensure the procurement specification matches the required 40 V reverse voltage and 200 mA current ratings. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as commercial variants may differ from military qualified versions.

Selection Notes

Select this component when a surface mount solution is required for low-voltage, high-efficiency rectification. The DO-35 SMT package offers a compact footprint compared to traditional through-hole equivalents. Consider the 700 mV forward voltage drop and 600 uA leakage current limits to ensure they align with the thermal and efficiency constraints of the target circuit design.

Part Context

This part belongs to the 1N6675-1 through 1N6677-1 series of Schottky barrier rectifiers. While the standard 1N6677-1 is available in axial through-hole packages, the UR-1 variant specifically denotes the surface mount configuration. The series provides options for 200 mA and 500 mA ratings, with the 1N6677-1 also offering military qualifications such as JAN, JANTX, and JANS.

Replacement Considerations

Direct substitutes include other 40 V, 200 mA Schottky diodes in the DO-35 SMT package. Verify pinout compatibility and thermal resistance characteristics before substitution. Cross-reference with Microchip's official replacement guides for equivalent performance in terms of forward voltage and reverse leakage.