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The 1N6759/TR is a small-signal Schottky barrier rectifier manufactured by Microchip Technology. It features a single diode configuration housed in a DO-41 through-hole package. The device supports a maximum repetitive peak reverse voltage of 60 V and an average forward rectified current of 1 A. It operates within a temperature range of -55°C to +125°C junction temperature, with a specified reverse leakage current of 100 µA.
Verify the specific suffix /TR indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status as some variants may be non-RoHS. Check lead times for production quantities exceeding available stock. Ensure the DO-41 package dimensions match the target PCB footprint requirements before finalizing procurement.
Select this component for applications requiring high-speed switching characteristics inherent to Schottky technology. The 60 V rating suits low-voltage systems, while the 1 A current capacity handles moderate loads. Consider the through-hole package constraint against surface-mount alternatives if space is limited. Validate thermal management needs given the 125°C maximum junction temperature limit.
This part belongs to Microchip's discrete diode portfolio, specifically the small-signal Schottky category. It serves as a legacy replacement for older rectifier designs requiring robust through-hole solutions. The DO-41 form factor ensures compatibility with existing manufacturing equipment designed for axial-lead components.
Cross-reference with other 60V 1A Schottky diodes in DO-41 packages. Verify pinout compatibility and thermal resistance values. Ensure substitute parts meet the same reverse leakage current specifications.