SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 1N6761 is a 1 Amp Schottky Barrier Rectifier manufactured by Microchip Technology. It features a maximum DC reverse voltage of 100 V and an average rectified forward current of 1 A. The device exhibits a forward voltage of 690 mV at 1 A and a reverse leakage current of 100 µA at 100 V. Capacitance is specified as 70 pF at 5 V and 1 MHz. It utilizes a hermetically sealed DO-41 axial through-hole package with a junction temperature range of -65°C to 150°C.
Verify the specific qualification level (JAN, JANTX, JANTXV, or JANS) required for your application, as availability varies by grade. Confirm that the DO-41 axial leaded package meets your board layout constraints. Ensure the operating environment stays within the specified -65°C to 150°C junction temperature range to maintain performance and longevity.
Select this component when a high-reliability, hermetically sealed Schottky rectifier is needed for 100 V applications. It is suitable for environments requiring MIL-PRF-19500/586 compliance. Consider the 1 A current rating and low forward voltage for efficiency. Verify thermal management requirements for the DO-41 package under continuous load conditions.
The 1N6761 belongs to the family of 1 Amp Schottky Barrier Rectifiers from Microchip Technology. It is registered with JEDEC and shares characteristics with similar models like the 1N5818-1 and 1N6759-1. The part is available in various military qualification levels, distinguishing it from commercial variants which may lack hermetic sealing.
Direct substitutes include other 1N6761 variants such as 1N6761-1, depending on the required qualification level. Cross-reference with other 1 Amp, 100 V Schottky diodes in DO-41 packages if exact grades are unavailable, ensuring electrical parameters match.