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The Microchip Technology 1N6765R is a dual ultrafast power rectifier qualified per MIL-PRF-19500/642. It features a maximum DC reverse voltage of 200 V and an average rectified current of 12 A per diode. The device exhibits a forward voltage of 1.05 V at 12 A and a reverse leakage current of 10 µA at 200 V. Capacitance is specified as 300 pF at 5 V and 1 MHz, with a reverse recovery time of 35 ns. It utilizes a TO-254AA package for through-hole mounting and operates within a junction temperature range of -55°C to 175°C.
Verify the specific revision level against the manufacturer's latest datasheet before procurement. Confirm that the ordering suffix matches the required military qualification standards. Ensure the package type aligns with the intended PCB layout. Check for any recent product change notifications regarding assembly sites or material composition updates.
Select this component when dual ultrafast rectification is required in a single package. The TO-254AA form factor supports high-current through-hole implementations. Verify that the 200 V reverse voltage rating exceeds the peak inverse voltage in the target circuit. Consider the 35 ns reverse recovery time for high-speed switching requirements.
The 1N6765R belongs to the 1N676x series of dual ultrafast power rectifiers manufactured by Microchip Technology. This series is designed for demanding applications requiring fast switching characteristics and high reliability. The devices are commonly used in power supplies and inverters where rapid recovery times are critical for efficiency.
The 1N6764R is a documented substitute within the same family offering similar electrical characteristics.