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Product Detailed Parameters
- Description：DIODE SCHOTTKY 45V 25A THINKEY2
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Technology：Schottky
- Voltage - DC Reverse (Vr) (Max)：45 V
- Current - Average Rectified (Io)：25A
- Voltage - Forward (Vf) (Max) @ If：775 mV @ 20 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：300 µA @ 45 V
- Capacitance @ Vr, F：-
- Mounting Type：Surface Mount
- Package / Case：ThinKey™2
- Supplier Device Package：ThinKey™2
- Operating Temperature - Junction：-55°C ~ 175°C
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Overview
The Microchip Technology 1N6816 is a low leakage Schottky diode featuring a tungsten barrier and oxide passivated structure. It offers guard ring protection for increased reverse energy handling capabilities. The component is available in standard polarity (strap-to-anode) configuration, designated as 1N6816, and reverse polarity (strap-to-cathode) as 1N6816R. This discrete electronic component is designed for applications requiring minimal reverse current.
Feature Summary
- Tungsten Schottky barrier construction
- Oxide passivated structure for very low leakage currents
- Guard ring protection for increased reverse energy
Applications
- Low leakage rectification circuits
- Reverse polarity protection systems
- High reliability power supply designs
Procurement Notes
Verify the specific polarity variant required, as the 1N6816 denotes strap-to-anode while 1N6816R indicates strap-to-cathode. Confirm package availability and RoHS compliance status with the supplier. Check for any product change notifications or obsolescence notices from Microchip Technology prior to finalizing procurement orders.
Selection Notes
Select this component when extremely low reverse leakage current is critical for circuit performance. The choice between standard and reverse polarity depends on the specific mounting orientation and strap connection requirements of the target assembly. Ensure the voltage and current ratings meet the application's peak inverse voltage demands.
Part Context
This part belongs to the family of low leakage Schottky diodes manufactured by Microchip Technology, formerly associated with Microsemi Corporation. These components are distinct from general-purpose rectifiers due to their specialized tungsten barrier technology and enhanced reverse energy handling provided by the guard ring structure.
Replacement Considerations
Direct substitutes include the 1N6816R for reverse polarity configurations. Verify pinout compatibility and electrical specifications before replacing. Cross-reference with other low leakage Schottky diodes if exact matches are unavailable.
