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The Microchip Technology 1N6822R is a low leakage Schottky barrier rectifier designed for high-efficiency power applications. It features a Tungsten/Platinum junction and an oxide passivated structure to ensure very low reverse leakage currents. The device offers a 45 Volts repetitive peak reverse voltage rating and supports a continuous forward current of 150 Amps. It utilizes the ThinKey3 surface mount package, providing robust performance with guard ring protection against reverse breakdown.
Verify the specific suffix 'R' indicates reverse polarity configuration (strap-to-cathode) compared to the standard 1N6822. Confirm the ThinKey3 package dimensions match your PCB footprint requirements. Ensure the operating temperature range aligns with your system's thermal design constraints before finalizing procurement.
Select this component when low forward voltage drop and high surge current capability are critical. The 150A rating suits high-power density designs. Consider the ThinKey3 package for automated surface mount assembly. Verify that the 45V reverse voltage provides sufficient margin for your circuit's peak inverse voltage conditions.
This part belongs to the 1N6822 series of Schottky rectifiers manufactured by Microchip Technology. It shares core electrical characteristics with the standard 1N6822 but differs in terminal polarity configuration. The series is engineered for applications requiring fast switching speeds and high efficiency in power conversion systems.
The standard 1N6822 serves as a functional substitute if reverse polarity orientation is not required. Verify pinout compatibility due to the strap-to-anode versus strap-to-cathode difference. Ensure any alternative maintains the 150A current rating and ThinKey3 package form factor.