SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 1N6823 is a low leakage Schottky diode manufactured by Microchip Technology. It utilizes a tungsten/platinum Schottky barrier and an oxide passivated structure to achieve very low leakage currents. The device features guard ring protection for increased reverse energy capability and an epitaxial structure that minimizes forward voltage drop. It is housed in a hermetically sealed, low profile ceramic surface mount power package designed for low package inductance and very low thermal resistance.
Verify the specific manufacturer source, as historical data links this part number to Microsemi Corporation. Confirm whether the component is currently produced under the Microchip Technology brand or if it represents a legacy product line. Ensure the datasheet matches the required hermetic ceramic package specifications and polarity configuration before procurement.
Select this component when hermetic sealing and extremely low reverse leakage are critical design requirements. The ceramic surface mount package offers advantages in environments where standard plastic packages may fail due to moisture ingress or high temperature stress. Consider the trade-off between the low forward voltage drop provided by the epitaxial structure and the specific mounting constraints of the ceramic package.
The 1N6823 belongs to a family of low leakage Schottky diodes, often associated with the 1N68xx series. These components are distinguished from standard silicon rectifiers by their use of tungsten/platinum barriers and specialized passivation techniques. The series typically includes variants like the 1N6820 and 1N6822, sharing similar structural goals of minimizing leakage and forward voltage in ruggedized applications.
The 1N6823R is documented as a reverse polarity variant within the same series. Verify pinout compatibility if substituting with other 1N68xx series parts. Cross-reference with other hermetically sealed Schottky diodes from Microsemi or Microchip if exact availability is limited.