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The Microchip Technology 1N6858UR-1/TR is a Schottky barrier diode in a DO-213AA MELF package, qualified to MIL-PRF-19500/444. It features a minimum breakdown voltage of 70 V at 10 µA and a maximum working peak reverse voltage of 50 V. The device exhibits a maximum forward voltage of 0.36 V at 1 mA and 0.65 V at 15 mA. Maximum reverse leakage current is 200 nA at the rated voltage, with capacitance limited to 4.5 pF at 1 MHz. Average rectified output current is 75 mA.
Verify the specific qualification level (JAN, JANTX, or JANTXV) required for your application, as these levels are available per MIL-PRF-19500/444. Confirm RoHS compliance status if necessary, noting that commercial versions may offer compliant options while military grades typically do not. Ensure the ordering suffix matches the desired reliability tier and packaging configuration before finalizing procurement.
Select this component when a hermetically sealed Schottky diode with military qualification is required. The 1N6858UR-1 offers a 50 V working peak reverse voltage and 75 mA average current capability. Consider the 4.5 pF capacitance for high-frequency performance. Verify thermal derating requirements based on the specific junction-to-end cap thermal resistance and ambient operating conditions.
This part belongs to a series including 1N5711, 1N5712, and 1N6857 variants, all sharing similar MELF surface mount packaging. The UR-1 designation indicates the metallurgically bonded MELF form factor. CDLL equivalents exist but lack military qualification grades. The series provides surface mount alternatives to traditional axial-leaded or other package types within the same electrical family.
CDLL6858 serves as a direct electrical equivalent but lacks military qualification grades. For axial-leaded replacements, consider 1N6858-1. Ensure any substitute matches the 70 V breakdown and 50 V reverse voltage specifications. Verify package compatibility if transitioning between MELF and other form factors.