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The Microchip Technology 1N6910UTK2 is a DLA-qualified power Schottky diode designed for aerospace and defense applications. It features a ThinKey2 surface-mount package with an anode-to-strap configuration. The device offers a maximum DC reverse voltage of 15 V and supports an average forward current of 25 A. Constructed with an oxide passivated structure, it provides guard ring protection to enhance reverse energy capability. This component is part of the JEDEC registered 1N6910–1N6912 series, ensuring reliability in high-performance environments.
Verify the specific suffix (e.g., TR for tape and reel) against your Bill of Materials, as packaging variations exist within the series. Confirm that the anode-to-strap configuration matches your circuit design requirements. Ensure compliance with relevant aerospace qualification standards before integration into final assemblies.
Select this component when a ruggedized, qualified Schottky diode is required for mission-critical applications. The 15V rating and 25A current capacity suit low-voltage, high-current power paths. Consider the ThinKey2 footprint for space-constrained PCB layouts requiring robust thermal and electrical performance.
This part belongs to the 1N6910–1N6912 series of power Schottky diodes manufactured by Microchip Technology. These devices are engineered for high reliability and are specifically targeted at demanding sectors such as aerospace and defense. The series includes variants with different strap configurations to accommodate diverse circuit topologies.
Publicly confirmed substitute part numbers for this specific component are not available in the provided documentation. Verify compatibility with any alternative components through rigorous testing against the original specifications.