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The Microchip Technology 1N6940UTK3/TR is a ThinKey silicon Schottky diode qualified per MIL-PRF-19500/726. It features an average rectified output current of 150 A at a case temperature of +100 °C and a working peak reverse voltage of 15 V. The junction-to-case thermal resistance is 0.25 °C/W for the anode-to-strap configuration. Non-repetitive peak surge current reaches 2000 A, with a junction temperature range spanning -65 to +150 °C.
Verify the specific suffix against official documentation to confirm polarity options such as anode-to-strap or cathode-to-strap configurations. Confirm RoHS compliance status as commercial grade versions differ from military qualifications. Ensure the ordering information matches the required reliability level including JAN, JANTX, or JANTXV standards before procurement.
Select this component when high current handling and low thermal resistance are critical requirements. The device supports double-side cooling capabilities suitable for demanding environments. Verify that the 15 V reverse voltage rating aligns with system specifications. Consider the strapless version if standard polarity configurations do not fit the layout constraints.
This part belongs to the 1N6940 through 1N6942 series of ThinKey silicon Schottky diodes. These devices are designed for rugged applications requiring high density power processing. The series offers various qualification levels and polarity options to accommodate diverse aerospace and defense design needs.
Consult official datasheets for direct substitutes within the 1N6940 to 1N6942 series. Verify matching thermal resistance and current ratings when selecting alternatives.