1N8026-GA

Overview

The 1N8026-GA is a silicon carbide (SiC) Schottky rectifier manufactured by GeneSiC Semiconductor. It features a 1200 V repetitive reverse voltage rating and a 2.5 A average forward current capability. The device utilizes a SiC_Schottky technology type with a breakdown voltage of 1200 V. Key SPICE model parameters include an saturation current of 4.45E-15 A, a junction capacitance of 3.00E-10 F at zero bias, and a transit time of 1.00E-10 s.

Feature Summary

• Utilizes silicon carbide Schottky technology for high-voltage rectification
• Provides a 1200 V breakdown voltage rating
• Supports an average forward current of 2.5 A

Applications

Procurement Notes

Verify the specific package configuration and thermal resistance values against the official datasheet before procurement. Confirm that the ordering suffix GA matches the required packaging format. Ensure the component meets the necessary environmental compliance standards for the intended application environment.

Selection Notes

Select this component for applications requiring high-temperature operation and fast switching characteristics typical of silicon carbide devices. Consider the 1200 V rating for high-voltage power conversion circuits. Evaluate the thermal management requirements based on the 2.5 A current rating and expected operating conditions.

Part Context

This component belongs to the 1N series of rectifiers from GeneSiC Semiconductor. It is designed as a robust alternative to traditional silicon diodes in high-power and high-temperature environments. The part number indicates a standard rectifier form factor within the manufacturer's portfolio.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ