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The 1N914B is a silicon epitaxial planar switching diode manufactured by Taiwan Semiconductor Corporation. It features a glass-sealed DO-35 axial leaded package designed for through-hole mounting. Key electrical specifications include a maximum repetitive peak reverse voltage of 100 V and a forward current rating of 150 mA. The device exhibits a fast reverse recovery time of 4 ns, ensuring efficient high-speed operation. It operates within a temperature range from -65 °C to +150 °C junction temperature.
Verify the specific datasheet revision and RoHS compliance status directly with Taiwan Semiconductor Corporation or authorized distributors. Confirm that the DO-35 package dimensions match your PCB footprint requirements. Ensure the procurement channel provides original manufacturer documentation to validate authenticity and traceability before integration into production.
Select this component when a standard small-signal switching diode with 100V reverse voltage capability is required. The 150mA forward current rating suits general-purpose low-power applications. Consider the 4ns recovery time for timing-sensitive designs. Verify thermal management needs against the specified operating temperature range for the intended environment.
This component belongs to the standard 1N914 series of small-signal switching diodes. It serves as a common replacement for legacy designs requiring reliable, fast-switching behavior in compact axial packages. The DO-35 form factor allows for easy integration into traditional through-hole manufacturing processes.
Cross-reference with other manufacturers' 1N914B equivalents such as those from Fairchild or Central Semiconductor. Verify pinout compatibility and ensure electrical parameters like reverse leakage current and forward voltage drop meet circuit tolerances.