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1PMT5922/TR7 is listed in the Single Zener Diodes range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is DIODE ZENER 7.5V 3W DO216AA. Review the specifications below when checking this part for your BOM.
The Microsemi Corporation 1PMT5922/TR7 is a single Zener diode housed in the Powermite DO-216AA surface-mount package. It provides a nominal Zener voltage of 7.5 V with a standard tolerance of ±5%. The device supports a maximum DC power dissipation of 3.0 W when mounted to TAB 1 at 60°C, with a maximum Zener current of 330 mA. Electrical characteristics include a dynamic impedance of 3.0 Ohms and a reverse leakage current of 5 µA at 6.0 V. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix to confirm the tape and reel packaging format. Confirm RoHS compliance status as older Microsemi variants may not meet current environmental directives. Ensure the procurement documentation references the correct JEDEC DO-216AA footprint dimensions for PCB layout compatibility.
Select this component when a 7.5 V regulation point is required in a space-constrained surface-mount application. Evaluate the 3.0 W power handling capability against the expected thermal load. Consider the tight tolerance availability if stricter voltage accuracy is needed beyond the standard ±5% specification.
This part belongs to the 1PMT5913B through 1PMT5956B series of 3.0 Watt Zener diodes manufactured by Microsemi. These devices utilize the proprietary Powermite package to deliver high power density in a small form factor. The series covers a wide voltage range from 3.3 Volts to 200 Volts.
Cross-reference with other manufacturers offering equivalent DO-216AA packages and 7.5 V Zener specifications. Verify that any substitute component matches the 3.0 W power dissipation rating and thermal resistance characteristics to ensure reliable operation.
The cathode is designated by TAB 1, which also serves as the mounting pad and heat sink interface.
The thermal resistance from the junction to TAB 1 is specified as 30°C/W.
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