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The 1SS295(TE85L,F) is a Schottky barrier diode array manufactured by Toshiba Semiconductor and Storage. It features a common cathode configuration with two diodes integrated into a single SC-59-3 package. The device is rated for a peak reverse voltage of 4V, making it suitable for low-voltage signal applications. Key electrical characteristics include a forward current of 100mA and a maximum operating temperature of 125°C. The component supports surface mount installation and complies with RoHS standards.
Verify the specific ordering code suffix to ensure the correct tape and reel quantity matches your production requirements. Confirm that the SC-59-3 footprint aligns with your PCB design guidelines. Check for RoHS compliance documentation if required by your supply chain regulations. Ensure storage conditions meet the manufacturer's recommendations to maintain component integrity prior to assembly.
Select this component when a dual Schottky diode solution is needed in a minimal footprint. The 4V rating limits its use to low-voltage environments only. Consider the common cathode topology for shared ground reference designs. Evaluate thermal management needs based on the 100mA forward current limit. Compare against standard discrete diodes if space constraints are not the primary driver.
This part belongs to Toshiba's 1SS series of small-signal Schottky diodes. The series is known for providing fast switching speeds and low power consumption. The TE85L suffix indicates the specific packaging format used for automated surface mount assembly. This family is commonly utilized in consumer electronics where size and efficiency are critical factors.
Direct substitutes may include other Schottky arrays from different manufacturers offering similar 4V ratings and SC-59 packages. Verify pin compatibility and electrical parameters such as forward voltage and reverse leakage current before substitution. Cross-reference with Toshiba's official replacement guides for guaranteed compatibility.