1SS315[U/D]

Overview

The 1SS315 is a silicon epitaxial Schottky barrier diode manufactured by Toshiba Semiconductor and Storage. Designed for UHF band mixer applications, it features low junction capacitance and high switching speed. The device utilizes an SOD-323 surface-mount package with two configuration options: the standard 1SS315 and the reverse-polarity variant 1SS315D. Key electrical characteristics include a maximum forward voltage of 0.7 V at 1 mA and a maximum reverse current of 10 nA at 10 V. The component operates within a temperature range of -40°C to +85°C and supports a peak forward surge current of 200 mA.

Feature Summary

• Schottky barrier construction for low forward voltage drop
• Optimized for UHF frequency mixer circuits
• Compact SOD-323 surface-mount footprint

Applications

• UHF band mixer circuits
• High-frequency signal detection
• RF mixing stages in communication equipment

Procurement Notes

Verify the specific suffix (U or D) against schematic requirements, as the polarity differs between variants. Confirm RoHS compliance status for the specific production batch, as historical data indicates variations. Ensure the SOD-323 package dimensions match the PCB land pattern. Check for lead-free certification if required by local regulations.

Selection Notes

Select the 1SS315 for standard polarity configurations or the 1SS315D where reverse polarity is necessary. Evaluate junction capacitance specifications to ensure compatibility with the target UHF operating frequency. Consider thermal management requirements based on the specified power dissipation limits in the official datasheet.

Part Context

This component belongs to Toshiba's discrete Schottky diode family designed for radio frequency applications. It serves as a specialized solution for mixer stages requiring fast switching and minimal capacitance. The part complements other RF diodes like the 1SS295 and 1SS154 in Toshiba's portfolio.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with equivalent Schottky diodes requires independent verification of pinout and electrical parameters.