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Product Detailed Parameters
- Description：RF DIODE SCHOTTKY 5V 3CP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Type：Schottky - 1 Pair Series Connection
- Voltage - Peak Reverse (Max)：5V
- Current - Max：30 mA
- Capacitance @ Vr, F：0.9pF @ 0.2V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：-
- Operating Temperature：125°C (TJ)
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：3-CP
- Grade：-
- Qualification：-
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Overview
The onsemi 1SS351-TB-E is a dual series Schottky barrier diode designed for VHF and UHF detector and mixer applications. It features a CP package with dimensions of 2.9 x 1.5 x 1.1 mm. Key electrical parameters include a maximum reverse voltage (VR) of 5 V, a maximum forward current (IF) of 30 mA, and a typical interterminal capacitance (Ct) of 0.69 pF at 6 V reverse bias. The device exhibits a maximum forward voltage (VF) of 0.23 V at 2 mA. It operates within a junction temperature range of -55 °C to +150 °C and supports surface mount installation.
Feature Summary
- Dual series configuration in a compact package facilitates high-density mounting
- Low interterminal capacitance supports high-frequency VHF and UHF operations
- Minimal forward voltage drop enhances efficiency in detector and mixer circuits
Applications
- VHF and UHF detector circuits
- High-frequency mixer applications
- RF signal processing equipment
Procurement Notes
Verify the manufacturer part number 1SS351-TB-E against official onsemi documentation to confirm specifications. Ensure the CP package type and electrical ratings match design requirements. Check for any specific ordering suffixes that may affect availability or compliance status. Confirm RoHS compliance through the latest datasheet revision.
Selection Notes
Select this component for designs requiring low capacitance Schottky diodes in small packages. The dual series arrangement reduces board space compared to discrete components. Verify that the 5 V reverse voltage rating suits the circuit's peak inverse voltage. Consider the 0.69 pF capacitance for high-frequency signal integrity.
Part Context
The 1SS351-TB-E belongs to onsemi's Schottky barrier diode family, specifically optimized for RF applications. It integrates two diodes in series within a single CP package. This integration simplifies layout and improves performance consistency in high-frequency circuits compared to using separate discrete diodes.
Replacement Considerations
The 1SS351 is listed as a similar part number from Sanyo Semicon Device with identical functional descriptions. Verify pinout and package compatibility before substitution. Other manufacturers may offer equivalent Schottky diodes, but direct replacement requires confirmation of electrical parameters.
