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The Toshiba Semiconductor and Storage 1SV308(TH3,F) is a silicon epitaxial PIN diode designed for VHF tuner band switching applications. It features a compact 1-1G1A package with dimensions of 1.2 x 0.8 x 0.6 mm. Key electrical characteristics include a maximum reverse voltage of 30 V, a typical total capacitance of 0.3 pF at 1 V reverse bias, and low series resistance values of 1.0 Ω at 100 MHz and 1.1 Ω at 1.5 GHz. The device supports a forward current of 50 mA and operates within a junction temperature range up to 125 °C.
Verify the specific ordering suffix against official Toshiba documentation to confirm packaging format and compliance status. Confirm RoHS compatibility directly with the manufacturer or authorized distributors prior to procurement. Ensure the component meets all applicable safety and reliability standards required for the final system design.
Select this component when low parasitic capacitance and minimal insertion loss are critical for VHF frequency operations. Evaluate the thermal management requirements to ensure the junction temperature remains within the specified 125 °C limit during continuous operation. Consider the physical footprint constraints of the 1-1G1A package during PCB layout planning.
This part belongs to Toshiba's lineup of silicon epitaxial planar PIN diodes engineered for radio frequency switching. It utilizes advanced semiconductor processing to achieve superior performance in terms of speed and power handling compared to standard rectifier diodes. The product line focuses on providing reliable components for consumer electronics and communication devices.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications carefully if considering alternative manufacturers for this specific application.