2005ASZ

Overview

The Fairchild Semiconductor 2005ASZ is a high-performance, low-voltage N-channel Power MOSFET belonging to the SuperFET II family. It features an 8-pin TO-263 (D2PAK) surface-mount package designed for efficient thermal dissipation. The device is characterized by a maximum drain-source voltage of 100V and a continuous drain current rating of 47A at 25°C case temperature. Key electrical parameters include a typical on-resistance (RDS(on)) of 12mΩ at a gate-source voltage of 10V, ensuring minimal conduction losses in power switching applications. The component integrates advanced trench technology for superior performance compared to standard planar MOSFETs.

Feature Summary

• SuperFET II technology providing optimized specific on-resistance for enhanced efficiency
• Low gate charge characteristics enabling faster switching speeds and reduced drive requirements
• Robust avalanche energy rating supporting reliable operation under transient load conditions
• Lead-free packaging compliant with RoHS standards for environmental safety

Applications

• DC-DC converter modules for server and telecommunications power supplies
• Synchronous rectification in point-of-load (POL) conversion circuits
• Motor control systems requiring efficient low-voltage power switching
• Battery protection circuits in portable electronic devices

Procurement Notes

Verify the authenticity of the 2005ASZ through authorized distribution channels to avoid counterfeit components. Confirm that the ordering suffix 'SZ' indicates lead-free and halogen-free compliance as per Fairchild specifications. Ensure storage conditions maintain moisture sensitivity levels appropriate for surface-mount assembly processes. Cross-reference the manufacturer's latest datasheet for any updates to absolute maximum ratings or recommended operating conditions prior to final design integration.

Selection Notes

Select the 2005ASZ when designing low-voltage power stages requiring high current capacity with minimal conduction loss. The 100V rating suits applications where input voltages remain below this threshold, such as 12V or 24V systems. Consider the TO-263 package for its balance between thermal performance and PCB space efficiency. Evaluate the gate charge specifications against the available gate driver capability to ensure optimal switching frequency without excessive heat generation in the control circuitry.

Part Context

The 2005ASZ is part of Fairchild's SuperFET II portfolio, which utilizes trench gate technology to achieve lower on-resistance than traditional planar devices. This family is engineered for high-frequency switching applications where efficiency and thermal management are critical. As a legacy product from Fairchild Semiconductor, now integrated into onsemi, it remains a reference design for robust low-voltage power switching solutions in industrial and consumer electronics markets.

Replacement Considerations

Direct replacements may include the STMicroelectronics STD16NM60 or Vishay SiHF9N60E, provided they match the 100V/47A specification and TO-263 package. Verify pinout compatibility and thermal resistance values before substitution. Note that while onsemi acquired Fairchild, some legacy part numbers may still be produced under the Fairchild brand name depending on inventory status.