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The 27S07ADM/B is a memory integrated circuit manufactured by Rochester Electronics, LLC. It functions as a static random-access memory (SRAM) device with a parallel interface. The component provides a storage capacity of 1 megabit, organized in a 1M x 1 configuration. It operates within a supply voltage range of 4.5V to 5.5V and supports an access time of 15 nanoseconds. The device is housed in a 28-lead Small Outline J-Lead (SOJ) package, specifically the 28-BSOJ variant with a width of 0.300 inches (7.62mm). It is designed for surface-mount installation and operates at temperatures between 0°C and 70°C.
Verify that the specific suffix 'ADM/B' corresponds to the exact pinout and electrical characteristics required by your design. Confirm the package type matches the 28-SOJ footprint. Ensure compatibility with the 4.5V to 5.5V power supply rails. Check for any specific manufacturing lot requirements if traceability is critical for your application.
Select this component when a 1Mb parallel SRAM with a 15ns access time is required. It is suitable for designs needing a 28-lead SOJ package. Consider it for applications operating within standard commercial temperature ranges. Verify that the voltage specifications align with the system's power distribution network before finalizing the bill of materials.
Rochester Electronics specializes in providing authorized continuing sources for end-of-life and obsolete semiconductors. This part is likely a re-manufactured or sourced version of a legacy Cypress Semiconductor device. The company ensures quality through rigorous testing and reliability standards, offering solutions for components no longer produced by original manufacturers.
Direct substitutes may include other 1Mb parallel SRAMs in 28-SOJ packages from various manufacturers. Verify pin compatibility and electrical parameters before substitution. Cross-reference with original manufacturer datasheets for equivalent performance metrics.