2ASC-17A1HP

Overview

The 2ASC-17A1HP is a dual-channel half-bridge gate driver IC module from Microchip Technology, designed for silicon carbide (SiC) MOSFET applications. It features an Augmented Core architecture rated for 1700V usable device voltage. The component provides two output channels with a peak gate current of 10A and gate output power of 5W. It includes inverting logic and supports primary-to-secondary isolation.

Feature Summary

• Dual-channel half-bridge configuration optimized for SiC MOSFET switching
• Augmented Core technology supporting high-voltage operation up to 1700V
• High peak gate current capability for fast switching transitions

Applications

• Silicon Carbide MOSFET gate driving
• Industrial power conversion systems
• High-voltage motor drive applications

Procurement Notes

Verify the specific datasheet revision and ordering information directly from Microchip Technology or authorized distributors. Confirm package type and thermal requirements for your PCB layout. Ensure compatibility with your control logic voltage levels before procurement.

Selection Notes

Select this component when driving SiC MOSFETs in half-bridge topologies requiring high voltage isolation and robust gate drive performance. Consider the 10A peak current and 1700V rating against your system's voltage and switching speed requirements.

Part Context

This part belongs to Microchip's Augmented Core gate driver family, specifically engineered for wide-bandgap semiconductor devices like SiC. It addresses the need for reliable, high-performance isolation in modern power electronics designs.

Replacement Considerations

Consult official Microchip documentation for qualified alternatives. No public substitute part numbers are confirmed in the provided source material.