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2ED1322S12MXUMA1 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HALF-BRIDGE 16SOIC. Review the specifications below when checking this part for your BOM.
The Infineon Technologies 2ED1322S12MXUMA1 is a 1200 V half-bridge gate driver IC designed for SiC MOSFET and IGBT applications. It features a 2.3 A source and 4.6 A sink output current capacity, integrated bootstrap diode, and ultra-fast Overcurrent Protection (OCP). The device operates with non-inverting logic configuration and supports supply voltages from 13 V to 20 V. Key protection mechanisms include fast short-circuit protection (DESAT), active Miller clamp, and shoot-through protection. It is housed in a PG-DSO-16-U02 package.
Verify the complete ordering part number matches the required suffix. Confirm that the specific variant aligns with your system's isolation requirements and thermal management needs. Ensure compatibility with the target semiconductor devices regarding voltage ratings and drive characteristics before finalizing procurement orders.
Select this component when designing circuits requiring isolated half-bridge driving for wide-bandgap semiconductors. Its integrated OCP and Miller clamp capabilities reduce external component count. Consider the 1200 V rating and current drive strength relative to the load capacitance and switching frequency requirements of the application.
This part belongs to Infineon's EiceDRIVER family, specialized for high-performance power electronics. It complements other variants like the 2ED1321S12M by offering enhanced protection features tailored for demanding industrial and automotive environments. The series focuses on reliability and compact integration for modern power stages.
Direct substitutes within the same family include the 2ED1321S12MXUMA1, though functional differences in protection features must be evaluated. Cross-referencing pinouts and electrical specifications is essential to ensure compatibility without circuit redesign.
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