Gate Driver 2ED2109S06FXUMA1 product image

2ED2109S06FXUMA1

$1.01
  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:04e267907c9a Category: Brand:

  
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2ED2109S06FXUMA1 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.

Gate Driver specifications for 2ED2109S06FXUMA1

  • Description:IC GATE DRVR HALF-BRIDGE 8SOIC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Driven Configuration:Half-Bridge
  • Channel Type:Synchronous
  • Number of Drivers:1
  • Gate Type:IGBT, MOSFET (N-Channel)
  • Voltage - Supply:10V ~ 20V
  • Logic Voltage - VIL, VIH:1.1V, 1.7V
  • Current - Peak Output (Source, Sink):290mA, 700mA
  • Input Type:Non-Inverting
  • Rise / Fall Time (Typ):100ns, 35ns
  • Operating Temperature:-40°C ~ 125°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:PG-DSO-8-53
  • Grade:-
  • Qualification:-
  • High Side Voltage - Max (Bootstrap):650 V

Gate Driver datasheet and documents for 2ED2109S06FXUMA1

2ED2109S06FXUMA1

Gate Driver Overview

The Infineon Technologies 2ED2109S06FXUMA1 is a low-current, high-side and low-side half-bridge gate driver designed for IGBT and N-channel MOSFET applications. It features a Silicon-on-Insulator (SOI) level shift architecture providing functional isolation with a maximum bootstrap voltage of 650 V. The device operates within a supply voltage range of 10 V to 20 V and delivers peak output currents of 290 mA source and 700 mA sink. Key timing parameters include a typical rise time of 100 ns and a fall time of 35 ns. It functions reliably across an operating temperature range from -40 °C to +125 °C.

Gate Driver Feature Summary

  • Utilizes SOI level shift technology for robust noise immunity against negative transient voltages
  • Integrates high-side and low-side drivers in a compact surface-mount package
  • Supports standard CMOS and LSTTL logic input levels

Gate Driver Applications

  • Industrial motor drives
  • Switched-mode power supplies
  • Inverter circuits

Gate Driver Procurement Notes

Verify the specific suffix FXUMA1 to confirm tape-and-reel packaging configuration. Ensure compatibility with the target control logic voltage levels before integration. Confirm that the 650 V isolation rating meets the safety requirements of the intended high-voltage application environment.

Gate Driver Selection Notes

Select this component for applications requiring moderate drive current with high noise immunity. The SOI-based design offers superior ruggedness compared to traditional bipolar technologies. Consider the 8-pin DSO package constraints for PCB layout and thermal management when designing the final system.

Gate Driver Part Context

This part belongs to the 2ED210x series of low-current 650 V half-bridge gate drivers. The family is characterized by excellent ruggedness and noise immunity. The 2ED2109 variant specifically provides balanced drive capabilities suitable for general-purpose power switching applications.

Gate Driver Replacement Considerations

Consult official documentation for direct pin-compatible substitutes within the 2ED210x series. Verify electrical parameters such as propagation delay and output current when considering alternative manufacturers.

2ED2109S06FXUMA12ED2109S06FXUMA1
$1.01
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