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2ED2109S06FXUMA1 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR HALF-BRIDGE 8SOIC. Review the specifications below when checking this part for your BOM.
The Infineon Technologies 2ED2109S06FXUMA1 is a low-current, high-side and low-side half-bridge gate driver designed for IGBT and N-channel MOSFET applications. It features a Silicon-on-Insulator (SOI) level shift architecture providing functional isolation with a maximum bootstrap voltage of 650 V. The device operates within a supply voltage range of 10 V to 20 V and delivers peak output currents of 290 mA source and 700 mA sink. Key timing parameters include a typical rise time of 100 ns and a fall time of 35 ns. It functions reliably across an operating temperature range from -40 °C to +125 °C.
Verify the specific suffix FXUMA1 to confirm tape-and-reel packaging configuration. Ensure compatibility with the target control logic voltage levels before integration. Confirm that the 650 V isolation rating meets the safety requirements of the intended high-voltage application environment.
Select this component for applications requiring moderate drive current with high noise immunity. The SOI-based design offers superior ruggedness compared to traditional bipolar technologies. Consider the 8-pin DSO package constraints for PCB layout and thermal management when designing the final system.
This part belongs to the 2ED210x series of low-current 650 V half-bridge gate drivers. The family is characterized by excellent ruggedness and noise immunity. The 2ED2109 variant specifically provides balanced drive capabilities suitable for general-purpose power switching applications.
Consult official documentation for direct pin-compatible substitutes within the 2ED210x series. Verify electrical parameters such as propagation delay and output current when considering alternative manufacturers.
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