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The Infineon Technologies 2ED2182S06FXUMA1 is a half-bridge gate driver IC designed for high-voltage power applications. It features an integrated bootstrap diode and utilizes silicon-on-insulator technology. The device provides independent high-side and low-side referenced output channels with a peak source/sink current of 2.5 A. It operates within a supply voltage range of 10 V to 20 V and supports CMOS and LSTTL logic inputs. The component is housed in a DSO-8 package and functions reliably across a temperature range of -40°C to +125°C.
Verify the specific ordering suffix FXUMA1 to ensure correct packaging configuration, as standard variants may differ in reel or cut-tape specifications. Confirm that the required logic voltage levels align with the system's control interface before procurement. Ensure compliance with RoHS3 standards if environmental regulations apply to the final assembly process.
Select this component when a 650 V half-bridge topology is required with moderate drive strength. The integrated bootstrap diode reduces bill-of-materials count compared to discrete solutions. Consider the propagation delay characteristics and thermal dissipation capabilities relative to the switching frequency requirements of the target application.
This part belongs to the 2ED218x series of high-current 650 V half-bridge gate drivers from Infineon. The series shares common architectural features such as SOI technology and integrated protection mechanisms. Variants within the family typically differ by output current ratings or specific packaging options while maintaining core functional compatibility.
Direct substitutes include other 2ED218x series devices with matching pinouts and electrical characteristics. Verify that alternative parts support the same 650 V isolation rating and 2.5 A output current capability. Cross-reference datasheets to ensure identical bootstrap diode integration and logic input thresholds.