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The Infineon Technologies 2ED2183S06FXUMA1 is a single-channel half-bridge gate driver designed for IGBT and MOSFET applications. It operates within a supply voltage range of 10 V to 20 V and delivers a peak output current of 2.5 A. The device features symmetric rise and fall times of 15 ns, with maximum propagation delays of 300 ns for both turn-on and turn-off states. It supports CMOS and LSTTL logic inputs and includes a shutdown function. Operating temperatures span from -40 °C to +125 °C, housed in an 8-pin DSO package.
Verify the complete part number including suffixes against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into manufacturing processes. Cross-reference datasheet revisions to validate electrical parameters.
Select this component for applications requiring a single half-bridge channel with high peak drive current. The 15 ns switching speed suits medium-frequency operations. Ensure input logic levels match CMOS or LSTTL standards. Verify that the 8-pin DSO package fits the available PCB footprint and thermal constraints.
This device belongs to the 2ED218x series of half-bridge gate drivers from Infineon. It shares architectural similarities with variants like the 2ED2181 and 2ED2184 but differs in specific delay parameters and channel configurations. The series targets general-purpose power switching applications requiring reliable isolation and drive capability.
Direct substitutes include other members of the 2ED218x family such as 2ED2181S06FXUMA1 or 2ED2184S06FXUMA1, provided their specific delay and configuration parameters align with the design requirements. Pin compatibility must be verified.