ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC GATE DRVR HALF-BRIDGE 8SOIC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- Driven Configuration：Half-Bridge
- Channel Type：-
- Number of Drivers：-
- Gate Type：-
- Voltage - Supply：-
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：-
- Input Type：-
- Rise / Fall Time (Typ)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：PG-DSO-8-910
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
Download product information
Overview
The 2ED2304S06FXLSA1 is a high-voltage integrated circuit (HVIC) half-bridge gate driver from Infineon Technologies, designed for driving IGBT and MOSFET power switches. It utilizes EiceDRIVER™ thin-film-SOI technology to ensure robust performance and noise immunity in demanding environments. The device operates with a supply voltage range of 15V to 26V and provides peak output currents of 0.7A for both high-side and low-side channels. Key electrical parameters include a maximum operating frequency of 100kHz and a propagation delay of 150ns typical. It features an integrated bootstrap diode and short-circuit protection capabilities.
Feature Summary
- Utilizes Infineon's thin-film-SOI technology for superior ruggedness and noise immunity in high-voltage applications.
Applications
- Industrial motor drives
- Inverter systems
- Switched-mode power supplies
Procurement Notes
Verify the specific ordering suffix 'XLSA1' against the official Infineon datasheet to confirm package type and tape-and-reel specifications. Ensure compatibility with existing PCB footprints, as the PG-DSO-8 package dimensions must match design requirements. Cross-reference the RoHS status and lifecycle stage with current manufacturer announcements to avoid obsolescence risks during procurement.
Selection Notes
Select this component when a compact half-bridge solution with integrated bootstrap functionality is required for 650V systems. The EiceDRIVER™ technology offers enhanced reliability compared to standard discrete solutions. Consider the 0.7A drive strength for medium-power IGBTs or MOSFETs. Evaluate thermal management needs based on the PG-DSO-8 package's thermal characteristics and expected switching frequencies up to 100kHz.
Part Context
This part belongs to Infineon's 2ED23xxS series of half-bridge gate drivers. It is specifically engineered for applications requiring high common-mode transient immunity and fast switching speeds. The integration of the bootstrap diode simplifies the external component count, making it suitable for space-constrained designs in power electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult official Infineon replacement guides or contact technical support for qualified alternatives that match the electrical and mechanical specifications.
