2ED28073J06FXUMA1

Gate Driver Overview

The Infineon Technologies 2ED28073J06FXUMA1 is a 600 V half-bridge gate driver IC featuring junction isolation and an integrated bootstrap diode. It operates within a supply voltage range of 10 V to 20 V, with undervoltage lockout thresholds at 8.9 V (On) and 7.7 V (Off). The device provides a source current of 20 mA and a sink current of 80 mA. Propagation delays are specified at 530 ns for both turn-on and turn-off states. Electrical characteristics include a rise time of 1.5 µs and a fall time of 225 ns. It supports CMOS and TTL logic inputs and functions reliably across a temperature range of -40 °C to +125 °C.

Gate Driver Feature Summary

• Integrated bootstrap diode eliminates external component requirements for high-side drive biasing.
• Junction isolation technology ensures robust noise immunity against negative transient voltages.
• Designed for low-current applications with optimized source and sink output capabilities.

Gate Driver Applications

• Driving MOSFETs and IGBTs in industrial motor control systems
• Power supplies requiring isolated half-bridge configurations
• Inverter circuits in renewable energy conversion equipment

Gate Driver Procurement Notes

Verify the complete ordering code including suffixes such as UMA1 for tape-and-reel packaging. Confirm that the functional level shift junction isolation meets specific safety standards required by your application design. Ensure input logic levels match the CMOS or TTL specifications provided in the official datasheet before integration.

Gate Driver Selection Notes

Select this component when a compact solution for low-current gate driving is required without external bootstrap diodes. The junction isolation offers advantages over optical isolators in terms of size and reliability. Consider the 20 mA source current limit when driving capacitive loads or ensuring adequate switching speeds for the target power devices.

Gate Driver Part Context

This part belongs to the 2ED210x series of low-current 650 V half-bridge gate drivers from Infineon. These drivers utilize silicon-on-insulator (SOI) technology to provide functional isolation between the low-voltage control side and the high-voltage power side. The series is designed for ruggedness in electrically noisy environments common in industrial and automotive power electronics.

Gate Driver Replacement Considerations

Direct substitutes within the same family may include other variants in the 2ED210x series with different pinouts or current ratings. Verify compatibility regarding package dimensions and electrical parameters before swapping components.

Gate Driver FAQ

What type of isolation does the 2ED28073J06FXUMA1 use?

It uses junction isolation (JI) technology, which provides functional isolation between the input and output stages.

Is an external bootstrap diode required for this driver?

No, the 2ED28073J06FXUMA1 features an integrated bootstrap diode, simplifying the circuit design.