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2EDN7523FXTMA1 is listed in the Gate Driver range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC GATE DRVR LOW-SIDE 8SOIC. Review the specifications below when checking this part for your BOM.
Gate Driver specifications for 2EDN7523FXTMA1
- Description：IC GATE DRVR LOW-SIDE 8SOIC
- Series：EiceDRIVER™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Driven Configuration：Low-Side
- Channel Type：Independent
- Number of Drivers：2
- Gate Type：MOSFET (N-Channel)
- Voltage - Supply：4.5V ~ 20V
- Logic Voltage - VIL, VIH：-
- Current - Peak Output (Source, Sink)：5A, 5A
- Input Type：Inverting
- Rise / Fall Time (Typ)：5.3ns, 4.5ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：PG-DSO-8
- Grade：-
- Qualification：-
- High Side Voltage - Max (Bootstrap)：-
Gate Driver datasheet and documents for 2EDN7523FXTMA1
Gate Driver Overview
The Infineon Technologies 2EDN7523FXTMA1 is a low-side gate driver IC from the EiceDRIVER family, designed for controlling MOSFETs and IGBTs. It features two inverting channels with a 5 A output current capability. The device operates within a supply voltage range of 4.5 V to 20 V and utilizes a PG-DSO-8 surface-mount package. Key electrical parameters include a maximum rise time of 5.3 ns and a fall time of 4.5 ns, with propagation delays capped at 25 ns. It supports an operating temperature range from -40°C to +150°C.
Gate Driver Feature Summary
- Dual-channel low-side configuration with inverting logic
- High-current drive capability for power switching devices
- Compact PG-DSO-8 surface-mount packaging
Gate Driver Applications
- MOSFET gate control
- IGBT gate control
- GaN HEMT gate control
Gate Driver Procurement Notes
Verify component status before procurement as the 2EDN7523FXTMA1 is marked as Not Recommended for New Designs (NRND). Confirm that existing inventory or last-time buy options align with long-term production requirements. Ensure compatibility with current design constraints given the end-of-life recommendation.
Gate Driver Selection Notes
Select this component only if dual-channel low-side driving with inverting logic is required. Verify that the 5 A peak current and PG-DSO-8 footprint meet board space and performance needs. Consider the NRND status when planning for future manufacturing scalability and supply chain stability.
Gate Driver Part Context
This part belongs to the Infineon 2EDN series of low-side gate drivers. These ICs utilize advanced 0.13 µm technology to provide robust high-voltage gate drive capabilities in small packages. The series targets applications requiring reliable control of power semiconductors with minimal external component count.
Gate Driver Replacement Considerations
Check for alternative parts within the 2EDN series, such as the 2EDN7523GXTMA1, which may offer updated availability while maintaining similar functional specifications.
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