2EDN8523FXTMA1

Gate Driver Overview

The Infineon Technologies 2EDN8523FXTMA1 is a non-isolated low-side MOSFET gate driver from the EiceDRIVER family. It features two channels with a supply voltage range of 4.5 V to 20 V and supports output currents up to 5 A. The device operates within an extended temperature range of -40°C to +150°C, utilizing a PG-DSO-8 surface-mount package. Key timing parameters include an input delay of 19 ns, rise time of 5.3 ns, and fall time of 4.5 ns.

Gate Driver Feature Summary

• Non-isolated low-side configuration for driving power switches
• Dual-channel architecture providing independent control outputs
• Extended junction temperature capability up to 150°C

Gate Driver Applications

• IGBT and MOSFET gate drive circuits
• GaN HEMT switching applications
• General-purpose power conversion systems

Gate Driver Procurement Notes

Verify component authenticity through authorized distribution channels due to obsolete lifecycle status. Confirm RoHS compliance details via official documentation before integration. Ensure packaging specifications match production requirements as availability may vary across suppliers.

Gate Driver Selection Notes

Select this component for designs requiring dual low-side isolation-free driving capabilities. Evaluate thermal management needs given the high operating temperature limit. Compare against current sourcing constraints associated with its discontinued manufacturing status.

Gate Driver Part Context

This part belongs to the 2EDN series of EiceDRIVER gate drivers manufactured by Infineon Technologies. It serves as a specialized interface between logic controllers and power semiconductor devices, facilitating efficient switching in various electronic power stages.

Gate Driver Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.