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The Infineon Technologies 2EDR8258XXUMA1 is a dual-channel, isolated half-bridge gate driver designed for robust MOSFET switching. It features reinforced galvanic isolation with a voltage rating of 1200 V and operates within an industrial temperature range of -40 °C to +125 °C. The device provides a peak output current of 9 A sink and 5 A source, supporting supply voltages from 3 V to 17 V. Key timing parameters include a maximum propagation delay of 47 ns, with rise and fall times of 7.5 ns and 6 ns respectively. Packaged in a DSO-14 surface-mount format, it ensures precise control for high-frequency power applications.
Verify the specific suffix configuration against official datasheets to confirm pinout and feature set. Ensure compliance with RoHS directives and check humidity sensitivity handling requirements during storage and assembly. Confirm package type matches design specifications before ordering.
Select this component for applications requiring high-voltage isolation and fast switching speeds. Consider the DSO-14 package for space-constrained designs. Evaluate thermal management needs based on the operating temperature range and output current capabilities.
Part of the EiceDRIVER family, optimized for industrial and automotive power electronics. Designed to drive high-side and low-side MOSFETs in half-bridge configurations with integrated protection features.
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match isolation voltage, current drive capability, and package dimensions.