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Product Detailed Parameters
- Description：DGTL ISO 5.7KV 2CH GT DVR DSO16
- Series：EiceDRIVER™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：Magnetic Coupling
- Number of Channels：2
- Voltage - Isolation：5700Vrms
- Propagation Delay tpLH / tpHL (Max)：38ns, 38ns
- Pulse Width Distortion (Max)：-
- Rise / Fall Time (Typ)：-
- Current - Output High, Low：9A, 5A
- Current - Peak Output：5A, 9A
- Voltage - Forward (Vf) (Typ)：-
- Voltage - Output Supply：-
- Grade：-
- Qualification：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：16-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：PG-DSO-16
- Common Mode Transient Immunity (Min)：150V/ns
- Approval Agency：UL, VDE
- Current - DC Forward (If) (Max)：-
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Overview
The Infineon Technologies 2EDR8259HXUMA1 is a dual-channel isolated gate driver IC designed for driving Si, SiC MOSFETs, and GaN HEMTs. It features reinforced galvanic isolation via on-chip coreless transformer technology, providing an insulation voltage class of 1200 V. The device offers a source current of 5 A and a sink current of 9 A. Input-to-output propagation delays are specified at 38 ns (turn-on) and 36 ns (turn-off). It operates within a supply voltage range of 3 V to 17 V and includes configurable dead-time control and shoot-through protection.
Feature Summary
- Provides reinforced galvanic isolation using on-chip coreless transformer technology for high common-mode transient immunity.
- Integrates configurable dead-time control and shoot-through protection to ensure safe half-bridge operation.
- Delivers fast signal propagation with excellent stability and low part-to-part skew for precise timing.
Applications
- Fast-switching power conversion systems utilizing Si and SiC MOSFETs
- Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) gate drive circuits
- Industrial motor drives requiring robust isolation
Procurement Notes
Verify the specific suffix 'H' against official documentation to confirm the package variant and isolation rating. Ensure compatibility with the target PCB footprint, as the DSO-14 package dimensions must match the design layout. Confirm that the required insulation voltage class aligns with system safety standards before finalizing procurement.
Selection Notes
Select this component when reinforced isolation is mandatory for safety compliance in high-voltage applications. The integrated dead-time control simplifies circuit design by reducing external component count. Consider the 1200 V insulation class for applications exceeding standard basic isolation requirements or operating in high pollution degree environments.
Part Context
This part belongs to the EiceDRIVER™ 2EDRx259X family of dual-channel isolated gate drivers. The family shares similar electrical characteristics but varies in package options and isolation ratings. The 2EDR8259HXUMA1 specifically utilizes a DSO-14 package with enhanced channel-to-channel creepage distance compared to other variants in the series.
Replacement Considerations
Direct substitutes within the same family include the 2EDR8259XXUMA1. Verify pinout compatibility and isolation specifications when cross-referencing with other Infineon isolated gate driver models.
