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Product Detailed Parameters
- Description：TH SCR
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Voltage - Off State：100 V
- Voltage - Gate Trigger (Vgt) (Max)：2 V
- Current - Gate Trigger (Igt) (Max)：10 mA
- Current - Hold (Ih) (Max)：20 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm)：-
- SCR Type：Standard Recovery
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Voltage - On State (Vtm) (Max)：-
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：-
- Current - Off State (Max)：-
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Overview
The Central Semiconductor Corp 2N1596 TIN/LEAD is a silicon NPN bipolar junction transistor (BJT) designed for through-hole mounting in TO-39-3 packages. It features a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 7 V. The device supports a maximum continuous DC collector current of 1 A and dissipates up to 1 W of power. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 10 mA and 1 V, with a transition frequency (fT) of 80 MHz. Operating temperatures range from -65°C to +150°C.
Feature Summary
- High-voltage silicon NPN construction suitable for robust switching applications
- TO-39 metal can package providing thermal stability and mechanical durability
- Wide operating temperature range supporting extreme environmental conditions
Applications
- General-purpose switching circuits requiring moderate voltage handling
- Amplifier stages within industrial control systems
- Driver circuits for relay or solenoid actuation
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm lead-free compliance status, as tin/lead designations may vary by production batch. Confirm RoHS directive alignment prior to integration into regulated assemblies. Cross-reference datasheet revisions to ensure parameter consistency with current manufacturing standards before finalizing procurement specifications.
Selection Notes
Select this component when a ruggedized NPN transistor with a metal case is required for high-reliability environments. Ensure the circuit voltage does not exceed the 40 V collector-emitter rating. Verify that the thermal management strategy accommodates the 1 W power dissipation limit within the specified temperature range. Compare hFE requirements against the minimum specification of 70 to guarantee adequate drive capability.
Part Context
This part belongs to the standard discrete bipolar transistor lineup manufactured by Central Semiconductor Corp. The company specializes in custom and standard discrete semiconductors, including BJTs, diodes, and MOSFETs. The 2N1596 represents a legacy numbering scheme often utilized in military and aerospace-grade hardware, reflecting its historical significance in high-reliability electronics design.
Replacement Considerations
Consult official substitution guides for equivalent TO-39 NPN transistors with matching voltage and current ratings. Verify pinout compatibility and thermal resistance characteristics before implementing any alternative components in existing designs.
