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Product Detailed Parameters
- Description：1.6A 250V TH SCR
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Box
- Voltage - Off State：250 V
- Voltage - Gate Trigger (Vgt) (Max)：800 mV
- Current - Gate Trigger (Igt) (Max)：200 µA
- Current - Hold (Ih) (Max)：2 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm)：15A @ 60Hz
- SCR Type：Standard Recovery
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Voltage - On State (Vtm) (Max)：1.5 V
- Current - On State (It (AV)) (Max)：1:00 AM
- Current - On State (It (RMS)) (Max)：1.6 A
- Current - Off State (Max)：-
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Overview
The 2N2327 PBFREE is a silicon NPN epitaxial planar transistor manufactured by Central Semiconductor Corp. It is housed in a TO-18 metal can package and designed for general-purpose switching and amplification applications. The device features a collector-emitter breakdown voltage of 40 V and supports a continuous collector current of 800 mA. Key electrical characteristics include a transition frequency of 300 MHz and a maximum power dissipation of 500 mW at 25°C ambient temperature. The component operates within a junction temperature range of -65°C to 200°C and complies with RoHS standards.
Feature Summary
- Utilizes epitaxial planar silicon technology for reliable performance
- Designed for high-speed switching and amplification tasks
- Constructed in a hermetically sealed TO-18 metal can package
Applications
- General-purpose switching circuits
- Audio and RF amplifier stages
- Driver circuits for low-power loads
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure compliance with current environmental directives. Confirm that the TO-18 package dimensions match the target PCB footprint requirements before finalizing procurement orders.
Selection Notes
Select this component when a robust NPN transistor with moderate current handling and high-frequency capability is required. Ensure the thermal management strategy accommodates the 500 mW power dissipation limit, particularly in enclosed environments where heat buildup may occur.
Part Context
This part belongs to the standard NPN small-signal transistor family produced by Central Semiconductor. It serves as a legacy alternative to modern surface-mount devices, offering through-hole compatibility for industrial and military-grade equipment requiring durable metal-can construction.
Replacement Considerations
Direct replacements include the 2N2222A and 2N3904, provided the application tolerates slight variations in current gain and transition frequency. Verify pinout compatibility and thermal resistance specifications before substituting.
