2N2639

Overview

The Central Semiconductor Corp 2N2639 is an NPN low noise dual transistor housed in a TO-78 metal case. It features a collector-base voltage of 45 V, a collector-emitter voltage of 45 V, and a continuous collector current of 30 mA. The device provides a minimum DC current gain (hFE) of 10 at 50 mA and a transition frequency (fT) of 300 MHz. Power dissipation is rated at 600 mW total for both dies at 25°C ambient temperature.

Feature Summary

• Low noise design optimized for sensitive signal amplification
• Dual configuration within a single hermetically sealed metal package
• High transition frequency suitable for RF applications

Applications

• RF amplifier stages
• Low noise pre-amplifiers
• Signal processing circuits

Procurement Notes

This component has been officially classified as End of Life by the manufacturer. Last purchase orders must be placed within six months of the notice date, with final shipments occurring twelve months after the notice. No direct replacement part number is currently available from the manufacturer.

Selection Notes

Designers should verify that the TO-78 package dimensions meet board space requirements. Since the device is discontinued, alternative sourcing strategies or redesigns using modern equivalents are necessary for new production runs.

Part Context

The 2N2639 belongs to a family of dual transistors manufactured by Central Semiconductor Corp in the TO-78 case style. This specific model is categorized as a low noise NPN device, distinct from the general-purpose amplifiers and switches found in the same product line.

Replacement Considerations

No official replacement part number is listed in the manufacturer's discontinuation notice. Customers are advised to contact [email protected] for assistance in locating alternate sources.