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Product Detailed Parameters
- Description：TRANS 2NPN 30V 50MA TO-78-6
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：50mA
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：1V @ 500µA, 5mA
- Current - Collector Cutoff (Max)：10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 1mA, 5V
- Power - Max：1.2W
- Frequency - Transition：60MHz
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：-
- Qualification：-
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Overview
The Central Semiconductor Corp 2N2903 is a PNP silicon epitaxial planar power transistor housed in a TO-18 metal can package. It features a maximum collector current of 600 mA and a collector-emitter breakdown voltage of 40 V. The device has a maximum power dissipation of 500 mW at 25°C ambient temperature, with a transition frequency of 150 MHz. Operating junction temperatures range from -65°C to +200°C. DC current gain (hFE) is specified as a minimum of 100 under standard test conditions.
Feature Summary
- Utilizes an epitaxial planar construction for enhanced reliability and performance stability.
- Designed for high-speed switching applications due to its 150 MHz transition frequency.
- Capable of operating within an extended temperature range up to 200°C junction temperature.
Applications
- General-purpose switching circuits
- Audio amplifier stages
- Driver circuits for low-power loads
Procurement Notes
Verify the specific manufacturing lot date code against the End of Life notice PDN01061. This component may be subject to discontinuation protocols. Confirm availability directly with Central Semiconductor or authorized distributors before finalizing design-in decisions.
Selection Notes
Select this component when a ruggedized PNP transistor with a metal case is required for high-temperature environments. Ensure the circuit design accommodates the 40V collector-emitter voltage limit and 600mA continuous current rating. Consider thermal management strategies given the 500mW power dissipation constraint in free air.
Part Context
This part belongs to the legacy 2N290x series of general-purpose NPN/PNP transistors. It serves as the PNP counterpart to the widely used 2N2222A NPN transistor. The TO-18 package provides superior heat dissipation compared to plastic equivalents, making it suitable for industrial and military-grade applications requiring long-term durability.
Replacement Considerations
Central Semiconductor lists no direct replacement for the 2N2903 in their EOL notice. Engineers should evaluate generic PNP transistors with matching TO-18 packages, such as the 2N3906, ensuring voltage and current ratings are sufficient for the application.
FAQ
What is the maximum junction temperature for the 2N2903?
The maximum operating junction temperature is +200°C.
Is the 2N2903 currently in production?
According to Central Semiconductor's Product Discontinuation Notice PDN01061, the 2N2903 has been transitioned to End of Life status with no listed replacement.
What is the typical DC current gain (hFE) specification?
The minimum DC current gain (hFE) is specified as 100 at a collector current of 10 mA and Vce of -1 V.
