ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
2N2977 is listed in the Bipolar Transistor Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DUAL SMALL-SIGNAL BJT. Review the specifications below when checking this part for your BOM.
Bipolar Transistor Arrays specifications for 2N2977
- Description：DUAL SMALL-SIGNAL BJT
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Bipolar Transistor Arrays datasheet and documents for 2N2977
Bipolar Transistor Arrays Overview
The Microchip Technology 2N2977 is a single NPN bipolar junction transistor (BJT) designed for through-hole mounting in the TO-3 package. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 15 A. The device supports a maximum power dissipation of 125 W and operates within a junction temperature range of -65°C to +200°C. Key electrical characteristics include a minimum DC current gain of 10 at 4 A with a collector-emitter voltage of 3 V, and a maximum collector cutoff current of 50 µA. The component is classified as non-RoHS compliant.
Bipolar Transistor Arrays Feature Summary
- High-power capability with 125 W dissipation rating
- Robust thermal performance supporting up to 200°C junction temperature
- Standard TO-3 metal can package for secure mounting
Bipolar Transistor Arrays Applications
- Power switching circuits
- Linear regulator output stages
- Industrial motor control systems
Bipolar Transistor Arrays Procurement Notes
Verify RoHS compliance status prior to integration, as this specific part number is documented as non-compliant. Confirm that the TO-3 package dimensions align with existing board layouts or chassis cutouts. Ensure thermal management solutions are adequate for the 125 W power dissipation rating under worst-case operating conditions.
Bipolar Transistor Arrays Selection Notes
Select this component when high current handling and robust packaging are required. Compare against alternative NPN transistors if lower voltage ratings suffice. Verify that the 60 V breakdown voltage meets circuit requirements. Consider the physical size of the TO-3 package during mechanical design phases.
Bipolar Transistor Arrays Part Context
The 2N2977 belongs to the standard military-grade NPN transistor series manufactured by Microchip Technology. It utilizes the legacy TO-3 metal can format, which provides superior heat sinking capabilities compared to plastic packages. This component serves as a discrete solution for high-current applications where integrated circuits lack sufficient power handling capacity.
Bipolar Transistor Arrays Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official Microchip cross-reference guides or datasheets for verified equivalent components.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
