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2N3810A is listed in the Bipolar Transistor Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is PNP TRANSISTOR. Review the specifications below when checking this part for your BOM.
Bipolar Transistor Arrays specifications for 2N3810A
- Description：PNP TRANSISTOR
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Bipolar Transistor Arrays datasheet and documents for 2N3810A
Bipolar Transistor Arrays Overview
The Microchip Technology 2N3810A is a dual PNP small-signal bipolar junction transistor (BJT) housed in a TO-78-6 metal can package. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 50mA. The device dissipates up to 350mW of power and operates within a temperature range of -65°C to +200°C. DC current gain ranges from 150 to 450 at specified test conditions, with a collector-emitter saturation voltage of 250mV.
Bipolar Transistor Arrays Feature Summary
- Dual PNP configuration for matched circuit applications
- Hermetically sealed TO-78 metal can construction
- Extended high-temperature operational capability
Bipolar Transistor Arrays Applications
- General-purpose switching circuits
- Matched dual transistor arrays
- High-reliability military systems
Bipolar Transistor Arrays Procurement Notes
Verify the specific suffix against official datasheets to confirm performance grades. Military variants require strict adherence to MIL-PRF-19500 standards. Confirm RoHS status as these components often lack compliance. Validate lead times due to specialized manufacturing processes.
Bipolar Transistor Arrays Selection Notes
Select based on required current gain binning and thermal management needs. Ensure the TO-78 footprint matches the PCB layout. Verify that the 60V breakdown voltage meets circuit requirements. Consider radiation hardening if operating in space environments.
Bipolar Transistor Arrays Part Context
This component belongs to the 2N3810 series of dual PNP transistors. It shares the base part number with JAN, JANTX, and JANS variants. These devices are designed for high-reliability applications requiring stable performance under extreme conditions.
Bipolar Transistor Arrays Replacement Considerations
- JAN2N3810
- JANTX2N3810
- JANTXV2N3810
Bipolar Transistor Arrays FAQ
What is the maximum operating temperature?
The maximum junction temperature is +200°C.
Is this component RoHS compliant?
No, the 2N3810A is typically not RoHS compliant due to its military-grade construction.
What is the package type?
It uses a TO-78-6 hermetically sealed metal can package.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
