2N4365

2N4365

$68.99
  • Description:SCR 800V 110A TO209AC
  • Series:-

SKU:4c6d88fea587 Category: Brand:

  
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Product Detailed Parameters

  • Description:SCR 800V 110A TO209AC
  • Series:-
  • Mfr:Powerex Inc.
  • Package:Bulk
  • Voltage - Off State:800 V
  • Voltage - Gate Trigger (Vgt) (Max):3 V
  • Current - Gate Trigger (Igt) (Max):250 mA
  • Current - Hold (Ih) (Max):-
  • Current - Non Rep. Surge 50, 60Hz (Itsm):1600A @ 60Hz
  • SCR Type:Standard Recovery
  • Operating Temperature:-40°C ~ 125°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis, Stud Mount
  • Package / Case:TO-209AC, TO-94-4, Stud
  • Supplier Device Package:-
  • Voltage - On State (Vtm) (Max):2.5 V
  • Current - On State (It (AV)) (Max):70 A
  • Current - On State (It (RMS)) (Max):110 A
  • Current - Off State (Max):10 mA

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2N4365

Overview

The Powerex Inc. 2N4365 is a silicon planar mesa power transistor designed for high-voltage switching applications. It features a hermetically sealed TO-3 metal case construction, providing robust thermal and mechanical performance. The device is characterized by a collector-emitter voltage rating of 800 V and a continuous collector current capacity of 10 A. Key electrical parameters include a DC current gain (hFE) ranging from 20 to 100 at a collector current of 5 A, and a low saturation voltage. The component operates within a junction temperature range of -55°C to +200°C, supporting reliable function in demanding industrial environments.

Feature Summary

  • Hermetically sealed TO-3 metal package for enhanced durability
  • High breakdown voltage capability suitable for critical switching circuits
  • Wide operating junction temperature range up to 200°C

Applications

  • High-voltage switching regulators
  • Industrial motor control systems
  • Inverter circuits

Procurement Notes

Verify the specific manufacturer source and lot traceability before procurement. Confirm that the component meets the required military or industrial specifications. Check for any end-of-life notices or obsolescence warnings associated with this part number. Ensure the packaging condition matches the requirements for sensitive handling procedures.

Selection Notes

Select this component when high voltage isolation and ruggedness are primary design constraints. Consider the thermal resistance characteristics of the TO-3 package for heat sink sizing. Evaluate the base drive requirements against the specified current gain ranges. Compare alternative packages if board space is limited, noting the through-hole mounting requirement.

Part Context

This component belongs to the family of discrete power transistors manufactured by Powerex Inc., now part of IXYS Corporation. These devices are engineered for high-reliability applications where standard commercial components may fail. The 2N4365 designation follows the JEDEC numbering system for NPN power transistors, indicating its standardized pinout and electrical profile within the industry.

Replacement Considerations

Cross-reference with other 800V NPN TO-3 power transistors such as the 2N3055 series variants, ensuring voltage and current ratings are sufficient. Verify pin compatibility and thermal interface dimensions before substitution. Consult manufacturer datasheets for direct equivalent parts with identical electrical characteristics.

2N43652N4365
$68.99
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