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2N4391UB is listed in the Jfets range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is JFET N-CH. Review the specifications below when checking this part for your BOM.
The Microchip Technology 2N4391UB is an N-channel silicon Junction Field-Effect Transistor (JFET) designed for small-signal applications. It utilizes a TO-18 metal can package with three leads, supporting through-hole mounting. The device operates within a temperature range of -65°C to +175°C and features a maximum power dissipation of 360 mW. Key electrical characteristics include a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. The component is manufactured using silicon technology and is classified under the JFET product category.
Verify the specific suffix 'UB' against official Microchip documentation to confirm exact binning or testing criteria, as suffixes often denote specific parameter ranges. Ensure compatibility with existing TO-18 footprints and validate thermal management requirements for the 360 mW dissipation limit in the target assembly.
Select this component when a ruggedized, hermetically sealed N-channel JFET is required for harsh environments. The wide temperature range and high breakdown voltages make it suitable for aerospace or industrial applications where standard plastic packages may fail. Confirm that the single-transistor configuration meets the circuit topology requirements.
The 2N4391UB belongs to the broader family of N-channel JFETs produced by Microchip Technology. It shares the fundamental 2N4391 designation but includes specific manufacturing or testing variations indicated by the UB suffix. This part serves as a discrete semiconductor solution within the transistor and discrete semiconductor category, distinct from integrated circuits or passive components.
Cross-reference with other manufacturers offering TO-18 packaged N-channel JFETs with similar 40V ratings. Verify pinout compatibility and ensure that alternative parts meet the same thermal and electrical specifications for direct substitution.
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