2N4854

Bipolar Transistor Arrays Overview

The Microchip Technology 2N4854 is a dual small-signal bipolar junction transistor (BJT) configured with NPN and PNP polarities. It utilizes silicon technology and is housed in a TO-78-6 through-hole package. The device supports a maximum DC collector current of 600 mA and operates within a voltage range defined by a collector-emitter breakdown voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. Key electrical characteristics include a collector-emitter saturation voltage of 400 mV and a power dissipation rating of 600 mW. The component functions reliably across an extended temperature range from -65°C to +200°C.

Bipolar Transistor Arrays Feature Summary

• Dual configuration integrating both NPN and PNP transistors within a single package for space-efficient circuit design.
• High thermal stability capability allowing operation at temperatures up to +200°C.

Bipolar Transistor Arrays Applications

• General-purpose switching applications requiring complementary NPN/PNP pairs.
• Small-signal amplification circuits utilizing low-power silicon BJT technology.
• Industrial or military-grade systems necessitating high-temperature operational reliability.

Bipolar Transistor Arrays Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to ensure correct packaging and handling specifications. Confirm RoHS compliance status as indicated in the datasheet, noting that some variants may not meet standard environmental directives. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Bipolar Transistor Arrays Selection Notes

Select this component when a compact dual-transistor solution is required for low-voltage, moderate-current applications. Ensure the design accommodates the 600 mW power dissipation limit and the TO-78-6 through-hole mounting constraints. Verify that the operating environment remains within the specified -65°C to +200°C temperature range to maintain performance integrity.

Bipolar Transistor Arrays Part Context

The 2N4854 belongs to the 2N4854 series of dual small-signal BJTs manufactured by Microchip Technology. It serves as a silicon-based alternative for legacy designs requiring complementary NPN and PNP functionality in a single hermetically sealed or plastic package. This part is distinct from JFETs like the 2N4858 and microcontrollers such as the PIC16F874.

Bipolar Transistor Arrays Replacement Considerations

Consult official Microchip cross-reference guides for verified substitutes. Generic equivalents must match the TO-78-6 package, 40 V VCEO rating, and 600 mA collector current specifications.