2N4854U/TR

Bipolar Transistor Arrays Overview

The JAN2N4854U/TR is a dual small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It integrates NPN and PNP transistors in a single U-6 surface-mount package. The device supports a maximum DC collector current of 600 mA and operates with a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 600 mW. The component functions within a temperature range of -65°C to +200°C. Key electrical characteristics include a collector-emitter saturation voltage of 400 mV, a minimum DC current gain (hFE) of 35 at 100 µA and 10 V, and a maximum hFE of 300 at 150 mA and 10 V.

Bipolar Transistor Arrays Feature Summary

• Dual configuration integrating complementary NPN and PNP structures for space-efficient circuit design
• Silicon technology construction supporting high-temperature operation up to 200°C
• Surface-mount U-6 package optimized for automated assembly processes

Bipolar Transistor Arrays Applications

• High-temperature signal switching circuits
• Complementary amplifier stages requiring matched dual transistor pairs
• Military or aerospace electronic systems demanding extended thermal stability

Bipolar Transistor Arrays Procurement Notes

Verify the JAN2N4854U/TR designation against official Microchip documentation to confirm it represents the military-grade variant of the standard 2N4854 series. Ensure that the U-6 surface-mount package matches the mechanical requirements of the target PCB layout. Confirm RoHS compliance status as indicated in the specific datasheet revision, noting that certain military variants may have different environmental declarations than commercial equivalents.

Bipolar Transistor Arrays Selection Notes

Select this component when a dual NPN/PNP pair is required in a compact surface-mount form factor. The U-6 package offers a smaller footprint compared to through-hole alternatives like the TO-78-6 while maintaining similar electrical ratings. Consider the 600 mA current capability and 600 mW power dissipation limits during thermal management planning. Verify that the operating environment stays within the specified -65°C to +200°C range to ensure reliable performance.

Bipolar Transistor Arrays Part Context

The JAN2N4854U/TR belongs to the 2N4854 family of dual small-signal BJTs produced by Microchip Technology. This family includes both through-hole and surface-mount versions, with the 'U' suffix typically denoting the U-6 SMT package. The JAN prefix often indicates adherence to military or high-reliability specifications, distinguishing it from standard commercial counterparts. The component serves as a solid-state alternative to discrete dual-transistor assemblies in compact electronic designs.

Bipolar Transistor Arrays Replacement Considerations

The 2N4854 (TO-78-6 through-hole version) shares identical electrical parameters but differs in package type. Direct substitution requires verifying PCB mounting compatibility. Other dual BJT packages from Microchip should be evaluated based on pinout correspondence and thermal resistance characteristics before implementation.