2N5210TA

Description：TRANS NPN 50V 0.1A TO-92-3
Series：-

SKU:4797dcf8115b Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 50V 0.1A TO-92-3
Series：-
Mfr：onsemi
Package：Cut Tape (CT),Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：700mV @ 1mA, 10mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 100µA, 5V
Power - Max：625 mW
Frequency - Transition：30MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5210TA

Overview

The onsemi 2N5210TA is an NPN general-purpose amplifier transistor designed for low noise and high gain applications. It operates within a collector current range of 1 µA to 50 mA. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a total device dissipation (PD) of 625 mW at 25°C. The device features a DC current gain (hFE) ranging from 200 to 600 at IC = 100 µA. It supports a junction temperature range of -55°C to +150°C and utilizes a TO-92-3 through-hole package.

Feature Summary

Engineered for low noise performance in general purpose amplifier circuits
Provides high DC current gain suitable for signal amplification tasks
Capable of operation across a wide industrial temperature range

Applications

Low noise audio pre-amplifier stages
General purpose signal amplification
High gain amplifier circuits operating at low collector currents

Procurement Notes

Verify the specific manufacturer origin as the 2N5210 designation was originally established by Fairchild Semiconductor. Confirm that the onsemi variant meets all required datasheet specifications for breakdown voltages and thermal resistance. Ensure the TO-92-3 package configuration matches the intended board layout requirements before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high gain and low noise characteristics at low bias currents. The TO-92-3 package facilitates easy integration into through-hole designs. Consider the 50 V collector-emitter rating and 625 mW power dissipation limits when determining thermal management strategies for the application environment.

Part Context

The 2N5210 is a legacy NPN bipolar junction transistor widely recognized for its utility in analog signal processing. Originally developed by Fairchild Semiconductor, the part has been maintained in production by subsequent manufacturers including onsemi. It remains a standard choice for discrete amplifier designs where moderate voltage handling and high linearity are prioritized over high-power switching capabilities.