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The Central Semiconductor Corp 2N5367 TRE TIN/LEAD is an NPN Darlington transistor designed for high-gain amplification and switching applications. It features a collector-emitter voltage (Vceo) of 40V, a collector-base voltage (Vcbo) of 40V, and an emitter-base voltage (Vebo) of 12V. The device supports a maximum DC collector current of 500mA with a power dissipation rating of 625mW. Packaged in TO-92-3 through-hole format, it operates within a temperature range of -65°C to +150°C.
Verify the exact datasheet specifications against the manufacturer's official documentation before integration. Confirm that the TO-92-3 package dimensions match your PCB footprint requirements. Ensure the tin/lead lead finish aligns with your assembly process capabilities and regulatory compliance needs for the target market.
Select this component when high current gain is required without external biasing networks. Compare its 500mA continuous current rating against load requirements. Evaluate the 625mW power dissipation limit relative to expected thermal conditions. Consider the TO-92-3 package for through-hole mounting constraints.
This part belongs to the Central Semiconductor Darlington transistor family, specifically engineered for general-purpose amplification. It shares architectural similarities with other NPN Darlington devices but offers distinct voltage and current ratings tailored for medium-power switching tasks within industrial and consumer electronics sectors.
Consult official substitution guides for equivalent NPN Darlington transistors with matching Vceo, Ic, and package types. Verify pinout compatibility and thermal characteristics before replacing.