2N5367 TRE TIN/LEAD

2N5367 TRE TIN/LEAD

$0.33
  • Description:40V 300MA 625MW TH TRANSISTOR-SM
  • Series:-

SKU:f86a3a0d8ee3 Category: Brand:

  
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Product Detailed Parameters

  • Description:40V 300MA 625MW TH TRANSISTOR-SM
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):300 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 30mA, 300mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 50mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92
  • Grade:-
  • Qualification:-

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2N5367 TRE TIN/LEAD

Overview

The Central Semiconductor Corp 2N5367 TRE TIN/LEAD is an NPN Darlington transistor designed for high-gain amplification and switching applications. It features a collector-emitter voltage (Vceo) of 40V, a collector-base voltage (Vcbo) of 40V, and an emitter-base voltage (Vebo) of 12V. The device supports a maximum DC collector current of 500mA with a power dissipation rating of 625mW. Packaged in TO-92-3 through-hole format, it operates within a temperature range of -65°C to +150°C.

Feature Summary

  • High current gain capability suitable for direct coupling applications
  • Robust thermal performance with extended operating temperature range
  • Lead-free tin/lead termination compliant with specific environmental standards

Applications

  • Direct coupled amplifier circuits
  • Solid-state relay drivers
  • High-level switching loads
  • Motor control interfaces

Procurement Notes

Verify the exact datasheet specifications against the manufacturer's official documentation before integration. Confirm that the TO-92-3 package dimensions match your PCB footprint requirements. Ensure the tin/lead lead finish aligns with your assembly process capabilities and regulatory compliance needs for the target market.

Selection Notes

Select this component when high current gain is required without external biasing networks. Compare its 500mA continuous current rating against load requirements. Evaluate the 625mW power dissipation limit relative to expected thermal conditions. Consider the TO-92-3 package for through-hole mounting constraints.

Part Context

This part belongs to the Central Semiconductor Darlington transistor family, specifically engineered for general-purpose amplification. It shares architectural similarities with other NPN Darlington devices but offers distinct voltage and current ratings tailored for medium-power switching tasks within industrial and consumer electronics sectors.

Replacement Considerations

Consult official substitution guides for equivalent NPN Darlington transistors with matching Vceo, Ic, and package types. Verify pinout compatibility and thermal characteristics before replacing.

2N5367 TRE TIN/LEAD2N5367 TRE TIN/LEAD
$0.33
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