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The onsemi 2N5457G is an N-channel silicon small-signal Junction Field-Effect Transistor (JFET) designed for low-noise and high-input impedance applications. It operates in depletion mode with a maximum drain-source voltage of 25 V and a gate-source cutoff voltage of 1 V at 10 nA. The device features a maximum input capacitance of 7 pF at 15 V and a typical drain current of 2 mA at 15 V. Packaged in a lead-free TO-92 (TO-226AA) three-pin configuration, it supports through-hole mounting and functions within a junction temperature range up to 135°C.
Verify the specific manufacturer datasheet for the 2N5457G to confirm current production status and exact electrical tolerances. Ensure the selected variant matches the required package style and thermal characteristics for the intended design environment.
Select this component when a low-noise N-channel JFET with a 25 V rating is required. Compare input capacitance and cutoff voltage specifications against circuit requirements to ensure compatibility with high-impedance source signals.
The 2N5457G belongs to the standard N-channel JFET family used in analog electronics. It shares functional similarities with other small-signal JFETs but is distinguished by its specific voltage ratings and noise profile provided by onsemi.
Consult official substitution guides for equivalent N-channel JFETs with matching 25 V ratings and TO-92 packaging. Verify pinout compatibility and electrical parameter overlaps before implementing any alternative components.