ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET - DUAL
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The Microchip Technology 2N5547 is a general-purpose NPN silicon epitaxial planar transistor designed for low-power amplifier and switch applications. It utilizes the Microchip proprietary Super-Planar Plus process to achieve high breakdown voltages and robust performance. The device is housed in a TO-92 package, providing a compact solution for through-hole mounting. Key electrical characteristics include a collector-emitter voltage rating of 60V and a continuous collector current capability of 800mA. The component operates within a junction temperature range of -65°C to +150°C, ensuring reliability across various industrial environments.
Feature Summary
- Super-Planar Plus process technology ensures high breakdown voltage capabilities and consistent manufacturing quality.
- Designed specifically for low-power amplifier and switching circuit applications.
- Robust construction supports operation across an extended industrial temperature range.
Applications
- General-purpose low-power amplification stages
- Electronic switching circuits
- Industrial control logic interfaces
Procurement Notes
Verify the specific ordering suffix against the official Microchip datasheet to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives if required by the target assembly. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current availability status and lead times prior to finalizing procurement plans.
Selection Notes
Select this component when a standard NPN transistor with 60V collector-emitter breakdown and 800mA continuous current capacity is required. The TO-92 package is suitable for prototyping and low-volume production where through-hole mounting is preferred. Evaluate thermal dissipation requirements carefully, as the package limits power handling compared to larger industrial packages.
Part Context
The 2N5547 belongs to the standard NPN transistor family produced by Microchip Technology. It serves as a direct replacement for legacy equivalents in existing designs requiring reliable low-power switching. The component is part of Microchip's broader discrete semiconductor portfolio, emphasizing durability and performance consistency for commercial and industrial electronic systems.
Replacement Considerations
Consult official substitution guides for equivalent NPN transistors with matching Vceo and Ic ratings. Verify pinout compatibility and thermal resistance values before integrating alternative components into the design.
FAQ
What is the maximum collector-emitter voltage for the 2N5547?
The maximum collector-emitter voltage (Vceo) is rated at 60V.
Which package style does the 2N5547 utilize?
The device is available in the TO-92 through-hole package.
What is the maximum continuous collector current?
The continuous collector current (Ic) is specified as 800mA.
