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The onsemi 2N5551TA is a general-purpose NPN bipolar junction transistor designed for high-voltage amplifiers and gas discharge display drivers. It operates within a collector-emitter voltage of 160 V and a collector-base voltage of 180 V, with a continuous collector current rating of 600 mA. The device features a transition frequency (fT) of 100 MHz and a maximum power dissipation of 625 mW at 25°C ambient temperature. It utilizes a TO-92-3 package (Case 135AR) and supports an operating and storage temperature range from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact shipping configuration. The 2N5551TA designation corresponds to the Ammo Pack shipping format. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing process. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability.
Select this component when circuit designs require a single NPN transistor capable of handling up to 160 V collector-emitter voltage. The 600 mA continuous current rating suits moderate load switching or linear regulation tasks. Verify that the thermal resistance characteristics align with the system's heat dissipation capabilities, particularly regarding the derating slope above 25°C ambient temperature.
This part belongs to the 2N5551 series of NPN transistors manufactured by onsemi. The 'TA' suffix specifically identifies the assembly location and the Ammo Pack shipping method. Other variants in the series include bulk bag options and tape & reel configurations, which share identical electrical specifications but differ in packaging logistics.
The datasheet lists 2N5551CTA, 2N5551YTA, and 2N5551YBU as discontinued devices. No active direct substitutes are explicitly confirmed in the provided documentation.